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  • image of IGBT Modules>NXH100T120L3Q0S1NG
  • image of IGBT Modules>NXH100T120L3Q0S1NG
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
NXH100T120L3Q0S1NG
IGBT Modules
Sanyo Semiconductor/onsemi
1200V GEN III Q0PACK WITH NI-PLA
-
Tray
24
Price:
$66.6270
inventory: 24
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Total price

1

$66.6270

$66.6270

24

$60.5770

$1,453.8480

48

$58.5530

$2,810.5440

96

$54.5160

$5,233.5360

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product details
image of IGBT Modules>NXH100T120L3Q0S1NG
NXH100T120L3Q0S1NG
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
NXH100T120L3Q0S1NG
IGBT Modules
Sanyo Semiconductor/onsemi
1200V GEN III Q
IGBT Modules
Tray
24 
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 75A
NTC ThermistorYes
Supplier Device Package18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max)54 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max122 W
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce4877 pF @ 25 V
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